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| Composite Transistors XN421N Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 0.650.15 2.8 -0.3 +0.2 +0.25 1.5 -0.05 6 0.650.15 1 0.3 -0.05 0.5 -0.05 2.9 -0.05 1.90.1 +0.2 q q Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 0.95 5 2 0.95 4 3 s Basic Part Number of Element q 1.1-0.1 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings 50 50 100 300 150 -55 to +150 Unit V V mA mW C C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: FK Internal Connection 6 5 4 Tr1 1 2 3 Tr2 s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Input resistance Resistance ratio Transition frequency (Ta=25C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1/R2 fT VCB = 10V, IE = -2mA, f = 200MHz Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1k VCC = 5V, VB = 2.5V, RL = 1k -30% 4.7 0.1 150 MHz 4.9 0.2 +30% 80 min 50 50 0.1 0.5 0.2 400 0.25 V V V k typ max Unit V V A A mA 0 to 0.05 UN221N x 2 elements 0.1 to 0.3 0.8 0.16-0.06 +0.2 +0.1 1.450.1 s Features +0.1 +0.1 1 Composite Transistors PT -- Ta 500 XN421N Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) IC -- VCE 160 Ta=25C 140 IB=1.0mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA VCE(sat) -- IC 10 hFE -- IC IC/IB=10 480 VCE=10V Collector to emitter saturation voltage VCE(sat) (V) Forward current transfer ratio hFE 400 Ta=75C Collector current IC (mA) 120 100 80 60 40 1 320 25C 240 0.1 25C Ta=75C 160 -25C 0.1mA 20 0 0 2 4 6 8 10 12 80 -25C 0.01 1 10 100 1000 0 1 10 100 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C 10000 VO=5V Ta=25C 100 VIN -- IO VO=0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 3 100 Input voltage VIN (V) 0.6 0.8 1 1.2 1.4 1000 10 1 2 10 0.1 1 0 1 10 100 1 0.4 0.01 0.1 1 10 100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 2 |
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